11

µPD66P04B

Data Sheet U13596EJ2V1DS00

3.2 Program Memory Writing Procedure

The program memory is written at high speed in the following procedure.

(1)

Pull down the pins not used to GND via resistor. Keep the CLK pin low.

(2)

Supply 5 V to the VDD pin. Keep the VPP pin low.

(3)

Supply 5 V to the VPP pin after waiting for 10

µs.

(4)

Wait for 2 ms until oscillation of the clock connected across the OSCIN and OSCOUT pins stabilizes.

(5)

Set the program memory address 0 clear mode by using the mode setting pins.

(6)

Supply 6 V to VDD and 12.5 V to VPP.

(7)

Set the program inhibit mode.

(8)

Write data to the program memory in the 1-ms write mode.

(9)

Set the program inhibit mode.

(10) Set the verify mode. If the data have been written to the program memory, proceed to (11). If not, repeat

steps (8) through (10).

(11) Additional writing of (number of times of writing in (8) through (10): X)

× 1 ms.

(12) Set the program inhibit mode.

(13) Input a pulse to the CLK pin four times to update the program memory address (+1).

(14) Repeat steps (8) through (13) up to the last address.

(15) Set the 0 clear mode of the program memory address.

(16) Change the voltages on the VDD and VPP pins to 5 V.

(17) Turn off power.

The following figure illustrates steps (2) through (13) above.

Repeated X time

Reset

Oscillation stabilization

wait time

Write

Verify

Additional write

Address

increment

Data input

Hi-Z

Hi-Z

Hi-Z

Data output

Data input

Hi-Z

VPP

VDD

GND

VDD+1

VDD

GND

CLK

VPP

D0-D7

MD0

MD1

MD2

MD3

VDD