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UPD66P04BGS датащи(PDF) 12 Page - Renesas Technology Corp |
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UPD66P04BGS датащи(HTML) 12 Page - Renesas Technology Corp |
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12 / 34 page ![]() 10 µPD66P04B Data Sheet U13596EJ2V1DS00 3. WRITING AND VERIFYING ONE-TIME PROM (PROGRAM MEMORY) The program memory of the µPD66P04B is a one-time PROM of 1002 × 10 bits. To write or verify this one-time PROM, the pins shown in Table 3-1 are used. Note that no address input pin is used. Instead, the address is updated by using the clock input from the CLK pin. Table 3-1. Pins Used to Write/Verify Program Memory Pin Name Function VPP Supplies voltage when writing/verifying program memory. Apply +12.5 V to this pin. VDD Power supply. Supply +6 V to this pin when writing/verifying program memory. CLK Inputs clock to update address when writing/verifying program memory. By inputting pulse four times to CLK pin, address of program memory is updated. MD0-MD3 Input to select operation mode when writing/verifying program memory. D0-D7 Inputs/outputs 8-bit data when writing/verifying program memory. OSCIN, OSCOUT Clock necessary for writing program memory. Connect a resistor (R = 47 k Ω) and a capacitor (C = 27 pF) to these pins. 3.1 Operating Mode When Writing/Verifying Program Memory The µPD66P04B is set in the program memory write/verify mode when +6 V is applied to the VDD pin and +12.5 V is applied to the VPP pin after the µPD66P04B has been in the reset status (VDD = 5 V, VPP = 0 V) for a specific time. In this mode, the operating modes shown in Table 3-2 can be set by setting the MD0 through MD3 pins. Connect all the pins other than those shown in Table 3-1 to GND via pull-down resistor. Table 3-2. Setting Operation Mode Setting of Operating Mode Operation Mode VPP VDD MD0 MD1 MD2 MD3 +12.5 V +6 V H L H L Clear program address to 0 L H H H Write mode L L H H Verify mode H × H H Program inhibit mode ×: don’t care (L or H) |
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