PCF85116-3TSLASH01 datasheet(11/21 Pages) PHILIPS

11 / 21 page

Philips Semiconductors

PCF85116-3

2048

× 8-bit CMOS EEPROM with I2C-bus interface

Product data

Rev. 04 — 25 October 2004

11 of 21

9397 750 14217

10. Characteristics

[1]

The bus capacitance ranges from 10 to 400 pF (Cb = total capacitance of one bus line in pF).

Table 7:

Characteristics

VDD = 2.7 to 3.5 V; VSS =0V; Tamb = −40 to +85 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supplies

VDD

supply voltage

2.7

5.5

IDDR

supply current read

fSCL = 400 kHz;

VDD = 5.5 V

1.0

IDDW

supply current E/W

fSCL = 400 kHz;

VDD = 5.5 V

1.0

IDD(stb)

standby supply current

VDD = 2.7 V

µA

VDD = 5.5 V

µA

SDA input/output (pin 5)

VIL

LOW level input voltage

−0.8

0.3VDD

VIH

HIGH level input voltage

0.7VDD

+6.5

VOL1

LOW level output voltage

IOL = 3 mA; VDD(min)

0.4

VOL2

IOL = 6 mA; VDD(min)

0.6

ILO

output leakage current

VOH =VDD

µA

to(f)

output fall time from VIHmin to VILmax

[1]

with up to 3 mA sink current at VOL1

20 + 0.1Cb -

250

with up to 6 mA sink current at VOL2

20 + 0.1Cb -

250

tSP

pulse width of spikes suppressed by

ﬁlter

100

input capacitance

VI =VSS

SCL input (pin 6)

VIL

LOW level input voltage

−0.8

0.3VDD

VIH

HIGH level input voltage

0.7VDD

+6.5

ILI

input leakage current

VI =VDD or VSS

±1

µA

fSCL

clock input frequency

400

kHz

tSP

pulse width of spikes suppressed by

ﬁlter

100

input capacitance

VI =VSS

WP input (pin 7)

VIL

LOW level input voltage

−0.8

0.1VDD

VIH

HIGH level input voltage

0.9VDD

-VDD + 0.8

Data retention time

data retention time

Tamb =55 °C

years

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