1996 Aug 05

3

Philips Semiconductors

Product specification

P-channel enhancement mode

vertical D-MOS transistor

BSP255

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

2. Pulse width and duty cycle limited by maximum junction temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−−300

V

gate-source voltage (DC)

−±20

V

drain current (DC)

−−325

mA

peak drain current

note 2

−−1.3

A

total power dissipation

−

4W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source current (DC)

−−0.5

A

peak pulsed source current

note 2

−−2A

Fig.2 Power derating curve.

handbook, halfpage

0

200

10

0

2

4

6

8

MBH446

50

100

150

Ptot

(W)

Ts (

Fig.3 DC SOAR.

handbook, halfpage

MBH445

−1

−10

−1

−10

VDS (V)

t p

T

P

t

t p

T

1 ms

100

µs

10 ms

DC

(1)

tp =

10

µs

ID

(A)