BSP255 datasheet(5/10 Pages) PHILIPS

5 / 10 page

1996 Aug 05

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP255

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−300

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = −1mA

−0.8

−−2V

IDSS

drain-source leakage current

VGS = 0; VDS = −240 V

−−−100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100

RDSon

drain-source on-state resistance

VGS = −10 V; ID = −160 mA

−−

Ω

VGS = −4.5 V; ID = −80 mA

−−

Ω

VGS = −2.8 V; ID = −50 mA

−−

Ω

Ciss

input capacitance

VGS = 0; VDS = −50 V; f = 1 MHz

−

Coss

output capacitance

VGS = 0; VDS = −50 V; f = 1 MHz

−

Crss

reverse transfer capacitance

VGS = 0; VDS = −50 V; f = 1 MHz

−

total gate charge

VGS = −10 V; VDD = −50 V;

ID = −160 mA; Tamb =25 °C

−

2.3

−

Qgs

gate-source charge

VGS = −10 V; VDD = −50 V;

ID = −160 mA; Tamb =25 °C

−

0.1

−

Qgd

gate-drain charge

VGS = −10 V; VDD = −50 V;

ID = −160 mA; Tamb =25 °C

−

0.7

−

Switching times (see Fig.11)

td(on)

turn-on delay time

VGS =0to −10 V; VDD = −50 V;

ID = −160 mA; Rgen =50 Ω

−

2.4

−

rise time

−

1.6

−

ton

turn-on switching time

−

td(off)

turn-off delay time

VGS = −10 to 0 V; VDD = −50 V;

ID = −160 mA; Rgen =50 Ω

−

fall time

−

toff

turn-off switching time

−

Source-drain diode

VSD

source-drain forward voltage

VGD = 0; IS = −0.5 A

−−−1.8

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