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BSP255 датащи(PDF) 8 Page - NXP Semiconductors

номер детали BSP255
подробное описание детали  P-channel enhancement mode vertical D-MOS transistor
PDF  10 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP255 датащи(HTML) 8 Page - NXP Semiconductors

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1996 Aug 05
8
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of
junction temperature; typical values.
VGSth at VDS =VGS ; ID = −1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
−75
−25
175
1.4
k
1.2
0.8
0.6
1.0
MBH438
25
75
125
Tj (°C)
Fig.13 Temperature coefficient of drain-source
on-state resistance as a function of
junction temperature; typical values.
(1) VGS = −4.5 V; ID = −80 mA.
(2) VGS = −2.8 V; ID = −50 mA.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
−75
−25
175
2.4
2.0
k
1.6
(1)
(2)
0.4
1.2
0.8
MBH439
25
75
125
Tj (°C)



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