BSP250 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Jun 20

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP250

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy printed-circuit board, 40

× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−30

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = −1mA

−1

−−2.8

IDSS

drain-source leakage current

VGS = 0; VDS = −24 V

−−−100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100

IDon

on-state drain current

VGS = −10 V; VDS = −1V

−3

−−

VGS = −4.5 V; VDS = −5V

−1

−−

RDSon

drain-source on-state resistance

VGS = −4.5 V; ID = −0.5 A

−

0.33

0.4

Ω

VGS = −10 V; ID = −1A

−

0.22

0.25

Ω

y

fs

forward transfer admittance

VDS = −20 V; ID = −1A

−

Ciss

input capacitance

VGS = 0; VDS = −20 V; f = 1 MHz −

250

−

Coss

output capacitance

VGS = 0; VDS = −20 V; f = 1 MHz −

140

−

Crss

reverse transfer capacitance

VGS = 0; VDS = −20 V; f = 1 MHz −

−

total gate charge

VGS = −10 V; VDS = −15 V;

ID = −2.3 A

−

QGS

gate-source charge

VGS = −10 V; VDS = −15 V;

ID = −2.3 A

−

QGD

gate-drain charge

VGS = −10 V; VDS = −15 V;

ID = −2.3 A

−

Switching times

ton

turn-on time

VGS =0to −10 V; VDD = −20 V;

ID = −1 A; RL =20 Ω

−

toff

turn-off time

VGS = −10 to 0 V; VDD = −20 V;

ID = −1 A; RL =20 Ω

−

140

Source-drain diode

VSD

source-drain diode forward voltage

VGD = 0; IS = −1.25 A

−−−1.6

trr

reverse recovery time

IS = −1.25 A; di/dt = 100 A/µs

−

150

200

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