1997 Jun 20

2

Philips Semiconductors

Product specification

P-channel enhancement mode

vertical D-MOS transistor

BSP250

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-resistance.

APPLICATIONS

• Low-loss motor and actuator drivers

• Power switching.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor

in a SOT223 plastic SMD package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT223

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

d

drain

3

s

source

4

d

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM121

4

12

3

Top view

s

d

g

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−−30

V

source-drain diode forward voltage

−−1.6

V

gate-source voltage (DC)

open drain

−±20

V

gate-source threshold voltage

−1

−2.8

V

drain current (DC)

−−3A

drain-source on-state resistance

−

0.25

Ω

total power dissipation

−

5W