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74LVC2G00DP датащи(PDF) 1 Page - Nexperia B.V. All rights reserved |
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74LVC2G00DP датащи(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 20 page ![]() 74LVC2G00 Dual 2-input NAND gate Rev. 16 — 20 June 2022 Product data sheet 1. General description The 74LVC2G00 is a dual 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. 2. Features and benefits • Wide supply voltage range from 1.65 V to 5.5 V • 5 V tolerant outputs for interfacing with 5 V logic • High noise immunity • ±24 mA output drive (VCC = 3.0 V) • CMOS low power dissipation • IOFF circuitry provides partial Power-down mode operation • Complies with JEDEC standard: • JESD8-7 (1.65 V to 1.95 V) • JESD8-5 (2.3 V to 2.7 V) • JESD8-B/JESD36 (2.7 V to 3.6 V) • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Overvoltage tolerant inputs to 5.5 V • ESD protection: • HBM JESD22-A114F exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Multiple package options • Specified from -40 °C to +85 °C and -40 °C to +125 °C |
Аналогичный номер детали - 74LVC2G00DP |
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Аналогичное описание - 74LVC2G00DP |
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