Nexperia

74LVC2G00

Dual 2-input NAND gate

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground 0 V); for test circuit see Fig. 9.

Tamb = -40 °C to +85 °C

Tamb = -40 °C to +125 °C

Symbol Parameter

Conditions

Min

Typ[1]

Max

Min

Max

Unit

nA, nB to nY; see Fig. 8

[2]

VCC = 1.65 V to 1.95 V

1.2

3.5

8.6

1.2

10.8

ns

VCC = 2.3 V to 2.7 V

0.7

2.3

4.8

0.7

6.0

ns

VCC = 2.7 V

0.7

3.0

5.6

0.7

7.0

ns

VCC = 3.0 V to 3.6 V

0.7

2.2

4.3

0.7

5.4

ns

tpd

propagation delay

VCC = 4.5 V to 5.5 V

0.5

1.8

3.3

0.5

4.2

ns

CPD

power dissipation

capacitance

per gate; VI = GND to VCC [3]

-

14

-

-

-

pF

[1] Typical values are measured at nominal VCC and at Tamb = 25 °C.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW).

PD = CPD × VCC 2 × fi × N + ∑(CL × VCC 2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(CL × VCC 2 × fo) = sum of outputs.

74LVC2G00

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Product data sheet

Rev. 16 — 20 June 2022

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