BLF544 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Jan 21

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF544

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS =28V

−−

1mA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 40 mA; VDS =10V

−

∆V

GSth

gate-source voltage difference of

matched pairs

ID = 40 mA; VDS =10V

−−

100

gfs

forward transconductance

ID = 1.2 A; VDS = 10 V

600

900

−

RDSon

drain-source on-state resistance

ID = 1.2 A; VGS =10V

−

0.85

1.25

Ω

IDSX

on-state drain current

VGS = 15 V; VDS =10V

−

4.8

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

6.4

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values.

VDS =10V.

handbook, halfpage

−4

−2

MDA504

ID (A)

T.C

(mV/K)

110

10−2

10−1

Fig.5

Drain current as a function of gate-source

voltage; typical values.

VDS =10V;Tj =25 °C.

handbook, halfpage

VGS (V)

(A)

MDA505

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