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BLF544 датащи(PDF) 6 Page - NXP Semiconductors |
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BLF544 датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 16 page ![]() 1998 Jan 21 6 Philips Semiconductors Product specification UHF power MOS transistor BLF544 APPLICATION INFORMATION Th =25 °C; Rth mb-h = 0.4 K/W unless otherwise specified. RF performance in a common source class-B circuit. Ruggedness in class-B operation The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) CW, class-B 500 28 40 20 >11 typ. 14 >50 typ. 60 CW, class-B 960 28 40 20 typ. 7 typ. 50 CW, class-B 960 24 40 15 typ. 7 typ. 50 Fig.9 Power gain and efficiency as functions of load power; typical values. Class-B operation; VDS = 28 V; IDQ =40mA; ZL = 4.3 + j6.3 Ω; f = 500 MHz. handbook, halfpage 10 30 20 0 4 8 12 16 14 18 40 60 80 22 Gp (dB) 26 MDA512 PL (W) Gp ηD ηD (%) Fig.10 Load power as a function of input power; typical values. Class-B operation; VDS = 28 V; IDQ =40mA; ZL = 4.3 + j6.3 Ω; f = 500 MHz. handbook, halfpage 0 30 20 10 0 1 PL (W) PIN (W) 23 MDA513 |
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