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BLF544 датащи(PDF) 6 Page - NXP Semiconductors

номер детали BLF544
подробное описание детали  UHF power MOS transistor
PDF  16 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF544 датащи(HTML) 6 Page - NXP Semiconductors

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1998 Jan 21
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
APPLICATION INFORMATION
Th =25 °C; Rth mb-h = 0.4 K/W unless otherwise specified.
RF performance in a common source class-B circuit.
Ruggedness in class-B operation
The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under
the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
28
40
20
>11
typ. 14
>50
typ. 60
CW, class-B
960
28
40
20
typ. 7
typ. 50
CW, class-B
960
24
40
15
typ. 7
typ. 50
Fig.9
Power gain and efficiency as functions of
load power; typical values.
Class-B operation; VDS = 28 V; IDQ =40mA;
ZL = 4.3 + j6.3 Ω; f = 500 MHz.
handbook, halfpage
10
30
20
0
4
8
12
16
14
18
40
60
80
22
Gp
(dB)
26
MDA512
PL (W)
Gp
ηD
ηD
(%)
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 28 V; IDQ =40mA;
ZL = 4.3 + j6.3 Ω; f = 500 MHz.
handbook, halfpage
0
30
20
10
0
1
PL
(W)
PIN (W)
23
MDA513



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