BLF544 datasheet(3/16 Pages) PHILIPS

номер детали	BLF544

подробное описание детали	UHF power MOS transistor

PDF	16 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 16 page

1998 Jan 21

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF544

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

VGS

gate-source voltage

−±20

drain current (DC)

−

3.5

Ptot

total power dissipation

Tmb ≤ 25 °C

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting base

3.7

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

0.4

K/W

Fig.2 DC SOAR.

(1) Current is this area may be limited by RDSon.

(2) Tmb =25 °C.

handbook, halfpage

10−1

110

102

(1)

(A)

VDS (V)

MRA992

(2)

Fig.3 Power/temperature derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

handbook, halfpage

(1)

(2)

Ptot

(W)

160

120

MBK442

Th ( °C)

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