DSPIC30F datasheet(50/220 Pages) MICROCHIP

50 / 220 page

dsPIC30F5011/5013

DS70116C-page 48

Preliminary

 2004 Microchip Technology Inc.

6.6.3

LOADING WRITE LATCHES

Example 6-2 shows a sequence of instructions that

can be used to load the 96 bytes of write latches. 32

TBLWTL

and 32 TBLWTH instructions are needed to

load the write latches selected by the table pointer.

EXAMPLE 6-2:

LOADING WRITE LATCHES

6.6.4

INITIATING THE PROGRAMMING

SEQUENCE

For protection, the write initiate sequence for NVMKEY

must be used to allow any erase or program operation

to proceed. After the programming command has been

executed, the user must wait for the programming time

until programming is complete. The two instructions fol-

lowing the start of the programming sequence should

be NOPs.

EXAMPLE 6-3:

INITIATING A PROGRAMMING SEQUENCE

; Set up a pointer to the first program memory location to be written

; program memory selected, and writes enabled

MOV

#0x0000,W0

;

MOV

W0,TBLPAG

; Initialize PM Page Boundary SFR

MOV

#0x6000,W0

; An example program memory address

; Perform the TBLWT instructions to write the latches

; 0th_program_word

MOV

#LOW_WORD_0,W2

;

MOV

#HIGH_BYTE_0,W3

;

TBLWTL

W2,[W0]

; Write PM low word into program latch

TBLWTH

W3,[W0++]

; Write PM high byte into program latch

; 1st_program_word

MOV

#LOW_WORD_1,W2

;

MOV

#HIGH_BYTE_1,W3

;

TBLWTL

W2,[W0]

; Write PM low word into program latch

TBLWTH

W3,[W0++]

; Write PM high byte into program latch

;

2nd_program_word

MOV

#LOW_WORD_2,W2

;

MOV

#HIGH_BYTE_2,W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

•

; 31st_program_word

MOV

#LOW_WORD_31,W2

;

MOV

#HIGH_BYTE_31,W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

Note: In Example 6-2, the contents of the upper byte of W3 has no effect.

DISI

; Block all interrupts with priority <7 for

; next 5 instructions

MOV

#0x55,W0

;

MOV

W0,NVMKEY

; Write the 0x55 key

MOV

#0xAA,W1

;

MOV

W1,NVMKEY

; Write the 0xAA key

BSET

NVMCON,#WR

; Start the erase sequence

NOP

; Insert two NOPs after the erase

NOP

; command is asserted

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