September 1992

3

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF522

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

40

V

gate-source voltage

−

20

V

DC drain current

−

1.8

A

total power dissipation

−

20

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

thermal resistance from junction to mounting

base

8.8 K/W

thermal resistance from mounting base to

heatsink

0.4 K/W

Fig.2 DC SOAR.

handbook, halfpage

0.1

1

1

10

100

5

ID

(A)

VDS (V)

MRA990

(2)

(1)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

5

10

15

20

(2)

25

30

35

0

20

40

60

80

100

120

MRA427

Ptot

(W)

Th (

(1)