BLF522 datasheet(6/12 Pages) PHILIPS

номер детали	BLF522

подробное описание детали	UHF power MOS transistor

PDF	12 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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6 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF522

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise speciﬁed.

RF performance in a common source class-B circuit.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

CW, class-B

500

12.5

> 10

typ. 11

> 50

typ. 55

Ruggedness in class-B operation

The BLF522 is capable of withstanding a full load

mismatch corresponding to VSWR = 50:1 through all

phases under the following conditions:

VDS = 15.5 V; f = 500 MHz at rated output power.

Fig.9

Power gain and efficiency as functions of

load power, typical values.

Class-B operation; VDS = 12.5 V; IDQ = 50 mA;

f = 500 MHz.

handbook, halfpage

100

34567

(%)

MRA247

(dB)

PL (W)

Fig.10 Load power as a function of input power,

typical values.

Class-B operation; VDS = 12.5 V; IDQ = 50 mA;

f = 500 MHz.

handbook, halfpage

0.4

0.8

1.2

1.6

MRA252

(W)

PIN (W)

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