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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BLF522 датащи(PDF) 10 Page - NXP Semiconductors |
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BLF522 датащи(HTML) 10 Page - NXP Semiconductors |
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10 / 12 page  September 1992 10 Philips Semiconductors Product specification UHF power MOS transistor BLF522 Fig.13 Input impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage 0 10 −20 −40 −60 −80 100 200 300 400 500 f (MHz) MRA250 ri Zi ( Ω) xi Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage 5 10 15 20 100 200 300 400 500 f (MHz) 0 MRA251 ZL ( Ω) RL XL Fig.15 Definition of MOS impedance. handbook, halfpage MBA379 Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W. handbook, halfpage 0 5 10 15 20 25 30 100 200 300 400 500 f (MHz) MRA248 GP (dB) |
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