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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BLF521 датащи(PDF) 11 Page - NXP Semiconductors |
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BLF521 датащи(HTML) 11 Page - NXP Semiconductors |
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11 / 14 page  November 1992 11 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Common emitter S-parameters Measured at VDS = 12.5 V and ID = 100 mA. Measured at VDS = 12.5 V and ID = 150 mA. f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.968 −24.0 10.749 161.5 0.044 72.6 0.900 −27.4 100 0.864 −55.4 9.105 138.3 0.094 51.7 0.828 −62.4 200 0.701 −91.0 6.353 112.7 0.130 29.7 0.735 −100.8 300 0.626 −112.4 4.693 97.0 0.140 17.2 0.693 −122.7 400 0.587 −127.0 3.622 85.6 0.141 9.4 0.678 −136.3 500 0.580 −137.1 2.959 76.5 0.139 4.0 0.675 −145.4 600 0.580 −144.6 2.498 68.8 0.135 0.0 0.675 −152.1 700 0.581 −151.7 2.131 61.4 0.130 −2.5 0.677 −157.5 800 0.588 −157.6 1.874 54.7 0.123 −4.3 0.677 −162.3 900 0.596 −163.5 1.656 48.8 0.115 −4.8 0.683 −166.9 1000 0.605 −168.8 1.473 43.0 0.107 −4.4 0.689 −171.2 f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 40 0.965 −25.9 11.435 160.6 0.044 72.0 0.876 −29.2 100 0.857 −58.7 9.534 136.8 0.092 50.1 0.804 −65.7 200 0.691 −95.1 6.529 111.3 0.125 28.6 0.715 −104.3 300 0.622 −116.7 4.783 96.0 0.134 16.7 0.678 −125.8 400 0.588 −130.3 3.663 84.8 0.135 9.2 0.666 −138.8 500 0.580 −140.8 2.988 75.9 0.133 4.3 0.665 −147.5 600 0.582 −147.8 2.515 68.4 0.128 0.7 0.666 −154.0 700 0.586 −154.9 2.154 61.2 0.123 −1.3 0.668 −159.1 800 0.588 −160.5 1.897 54.6 0.117 −2.6 0.669 −163.8 900 0.599 −166.3 1.673 48.8 0.111 −2.6 0.675 −168.1 1000 0.609 −171.7 1.493 43.0 0.103 −1.7 0.681 −172.3 |
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