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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BLF521 датащи(PDF) 10 Page - NXP Semiconductors |
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BLF521 датащи(HTML) 10 Page - NXP Semiconductors |
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10 / 14 page  November 1992 10 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.13 Input impedance as a function of frequency (series components), typical values per section. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω;PL =2W. handbook, halfpage 100 50 0 −50 −100 200 xi ri f (MHz) Zi ( Ω) 300 500 400 MDA478 Fig.14 Load impedance as a function of frequency (series components), typical values. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω;PL =2W. handbook, halfpage 100 200 300 ZL ( Ω) f (MHz) 500 50 0 40 400 30 20 10 MDA477 XL RL Fig.15 Definition of MOS impedance. handbook, halfpage MBA379 Zi ZL Fig.16 Power gain as a function of frequency, typical values. Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 Ω;PL =2W. handbook, halfpage 100 200 300 Gp (dB) f (MHz) 500 20 0 16 400 12 8 4 MDA476 |
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