November 1992

6

Philips Semiconductors

Product specification

UHF power MOS transistor

BLF521

APPLICATION INFORMATION FOR CLASS-B OPERATION

RF performance in a common source class-B test circuit.

MODE OF OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(%)

CW, class-B

500

12.5

10

2

> 10

typ. 13

> 50

typ. 60

Ruggedness in class-B operation

The BLF521 is capable of withstanding a load mismatch

corresponding to VSWR = 50:1 through all phases under

the following conditions:

Fig.9

Power gain and efficiency as functions of

load power, typical values.

handbook, halfpage

0.5

1.5

PL (W)

Gp

(dB)

2.5

3.5

20

0

16

12

8

4

100

0

80

60

40

20

MDA480

Gp

ηD

(%)

ηD

Fig.10 Load power as a function of input power,

typical values.

handbook, halfpage

0

0.2

1.0

4

3

1

0

2

0.4

0.6

0.8

MDA479

PL

(W)

PIN (W)