BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

8 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

7.4.2 1-Carrier W-CDMA

Test signal: 3GPP test model 1; 1 to 64 DPCH (100 % clipping); PAR = 9.9 dB at 0.01 %

probability on CCDF per carrier.

VDS =30V; IDq = 770 mA; VGS(amp)peak = 0.764 V.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

VDS =30V; IDq = 770 mA; VGS(amp)peak =0.764 V.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

Fig 6.

Power gain as a function of output power;

typical values

Fig 7.

Drain efficiency as a function of output power;

typical values

VDS =30V; IDq = 770 mA; VGS(amp)peak = 0.764 V.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

VDS =30V; IDq = 770 mA; VGS(amp)peak =0.764 V.

(1) f = 2110 MHz

(2) f = 2155 MHz

(3) f = 2200 MHz

Fig 8.

Adjacent channel power ratio (5 MHz) as a

function of output power; typical values

Fig 9.

Peak-to-average power ratio as a function of

output power; typical values

amp01770

38

40

42

44

46

48

50

52

12

13

14

15

16

17

PL (dBm)

Gp

Gp

(dB)

(dB)

(dB)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)

amp01771

38

40

42

44

46

48

50

52

0

10

20

30

40

50

60

PL (dBm)

ηD

ηD

(%)

(%)

(%)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)

amp01772

38

40

42

44

46

48

50

52

-50

-45

-40

-35

-30

-25

-20

PL (dBm)

ACPR

ACPR5M

5M

ACPR5M

(dBc)

(dBc)

(dBc)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

amp01773

38

40

42

44

46

48

50

52

5

6

7

8

9

10

11

PL (dBm)

PAR

PAR

PAR

(dB)

(dB)

(dB)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)