BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

3 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

6.

Characteristics

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Main device

V(BR)DSS

drain-source breakdown voltage VGS =0V; ID = 1.3 mA

65

--V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 131 mA

1.6

2.0

2.4

V

VGSq

gate-source quiescent voltage

VDS =30 V; ID = 776 mA

-

2.1

-

V

IDSS

drain leakage current

VGS =0V; VDS =32V

-

-

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +2.37 V

-

24

-

A

IGSS

gate leakage current

VGS =9V; VDS = 0 V

-

-

140

nA

gfs

forward transconductance

VDS =10 V; ID = 4.585 A

-

13

-

S

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 2.37 V;

ID =4.585 A

-

99

170

m



Peak device

V(BR)DSS

drain-source breakdown voltage VGS =0V; ID = 2.2 mA

65

--V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 217 mA

1.6

2.0

2.4

V

VGSq

gate-source quiescent voltage

VDS =30 V; ID =1100mA

-

2.2

-

V

IDSS

drain leakage current

VGS =0V; VDS =32V

-

-

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +2.37 V

-

38

-

A

IGSS

gate leakage current

VGS =9V; VDS = 0 V

-

-

140

nA

gfs

forward transconductance

VDS =10 V; ID = 7.595 A

-

20

-

S

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 2.37 V;

ID =7.595 A

-

65

107

m



Table 7.

RF characteristics

Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 1 to 64 DPCH; f1 = 2112.5 MHz; f2 = 2197.5 MHz; RF performance at VDS =30V;

IDq = 776 mA (main); VGS(amp)peak =0.770 V; Tcase =25 C; unless otherwise specified; in an

asymmetrical Doherty production test circuit at frequencies from 2110 MHz to 2200 MHz.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL(AV) = 56.2 W

14

15

-

dB

RLin

input return loss

PL(AV) = 56.2 W

-

17

9dB



D

drain efficiency

PL(AV) = 56.2 W

44

48

-

%

ACPR

adjacent channel power ratio

PL(AV) = 56.2 W

-

29

25

dBc

Table 8.

RF characteristics

Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 1 to 64 DPCH; f1 = 2112.5 MHz; f2 = 2197.5 MHz; RF performance at VDS =30V;

IDq = 776 mA (main); VGS(amp)peak =0.770 V; Tcase =25 C; unless otherwise specified; in an

asymmetrical Doherty production test circuit at frequencies from 2110 MHz to 2200 MHz.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PARO

output peak-to-average ratio

PL(AV) = 89.1 W

5.9

6.5

-

dB

PL(M)

peak output power

PL(AV) = 89.1 W

340

390

-

W