MMPF0100Z datasheet(74/128 Pages) NXP

74 / 128 page

NXP Semiconductors

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.5.2

SWBST external components

6.4.5.3

SWBST specifications

Table 88. SWBST external component requirements

Components

Description

Values

CINBST(59)

SWBST input capacitor

F

CINBSTHF(59)

SWBST decoupling input capacitor

0.1

F

COBST(59)

SWBST output capacitor

2 x 22

F

LSBST

SWBST inductor

2.2

H

DBST

SWBST boost diode

1.0 A, 20 V Schottky

Notes

59.

Use X5R or X7R capacitors.

Table 89. SWBST electrical specifications

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN =VINSWBST =3.6 V, VSWBST =5.0 V,

ISWBST = 100 mA, typical external component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at

VIN =VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.

Symbol

Parameters

Min.

Typ.

Max.

Units

Notes

Switch mode supply SWBST

VINSWBST

Input voltage range

2.8

–

4.5

VSWBST

Nominal output voltage

–

Table 87

–V

VSWBSTACC

Output voltage accuracy

2.8 V

 VIN  4.5 V

0 < ISWBST < ISWBSTMAX

-4.0

–

3.0

VSWBST

Output ripple

2.8 V

 VIN  4.5 V

0 < ISWBST < ISWBSTMAX, excluding reverse recovery of Schottky

diode

–

120

mV Vp-p

VSWBSTLOR

DC load regulation

0 < ISWBST < ISWBSTMAX

–0.5

–

mV/mA

VSWBSTLIR

DC line regulation

2.8 V

 VIN 4.5 V, ISWBST = ISWBSTMAX

–

ISWBST

Continuous load current

2.8 V

 VIN  3.0 V

3.0 V

 VIN  4.5 V

–

500

600

ISWBSTQ

Quiescent current

auto

–

222

289

A

RDSONBST

MOSFET on resistance

–

206

306



ISWBSTLIM

Peak current limit

1400

2200

3200

(60)

VSWBSTOSH

Start-up overshoot

ISWBST =0.0 mA

–

500

VSWBSTTR

Transient load response

ISWBST from 1.0 mA to 100 mA in 1.0 µs

Maximum transient amplitude

–

300

VSWBSTTR

Transient load response

ISWBST from 100 mA to 1.0 mA in 1.0 µs

Maximum transient amplitude

–

300

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