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SLG200030 датащи(PDF) 5 Page - Renesas Technology Corp

номер детали SLG200030
подробное описание детали  High Voltage Gate Driver
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

SLG200030 датащи(HTML) 5 Page - Renesas Technology Corp

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Datasheet
9-Feb-2022
CFR0011-120-01
Revision 1.04
Page 5 of 9
SLG55022-200030
High Voltage Gate Driver
©2022 Renesas Electronics Corporation
Delay Time and Slew Rates
The two components of controlling the application of FET source voltage to the load are a fixed time delay before beginning turn
on of the FET (DLY_t below) and the Slew Time of the source voltage (Slew_t below).
Having control over the Slew Rate of the FET’s source voltage as the FET is turning on is important in controlling dv/dt caused
transients. A power FET, for example, switching a 5 V rail which has a total of 500
µF of decoupling, fully on in 10 µs will generate
a 250 A current surge which is very undesirable. If the FET turn on time can be stretched to 1 ms, the current surge to charge
the decoupling capacitors is reduced to 2.5 A. The SLG55022 controls slew rate of a FET’s source voltage as it is turned on. A
range of slew rates are available as device order options. Obviously the time to fully slew the source voltage to fully on is a function
of the drain supply voltage. The table and graph below shows source voltage ramp times for various slew rates supported by the
SLG55022 for a range of specific source voltages.
* The minimum time that ON can be de-asserted between switching cycles is 100 ms.
Slew Rates
(V/ms)
Ramp Times (ms) vs. Source Voltages (V)
1.1 V
1.5 V
1.8 V
3.3 V
5.0 V
12 V
18.5 V
2.00
0.55
0.75
0.90
1.65
2.50
6.00
9.25
ON
V S
IS
DLY_t
Slew_t
Discharge_t
*



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