JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features

• Ultra-low noise:

– Voltage noise:

• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA

• 0.9 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.8 fA/√Hz at 1 kHz

• Low gate current: 10 pA (max)

• Low input capacitance: 24 pF at VDS = 5 V

• High gate-to-drain and gate-to-source breakdown

voltage: –40 V

• High transconductance: 68 mS

• Packages: Small SC70 and SOT-23

2 Applications

• Microphone inputs

• Hydrophones and marine equipment

• DJ controllers, mixers, and other DJ equipment

• Professional audio mixer or control surface

• Guitar amplifier and other music instrument

amplifier

• Condition monitoring sensor

3 Description

The JFE150 is a Burr-Brown™ discrete JFET built

using Texas Instruments' modern, high-performance,

analog bipolar process. The JFE150 features

performance not previously available in older discrete

JFET technologies. The JFE150 offers the maximum

possible noise-to-power efficiency and flexibility,

where the quiescent current can be set by the user

and yields excellent noise performance for currents

from 50 μA to 20 mA. When biased at 5 mA, the

device yields 0.8 nV/√Hz of input-referred noise,

giving ultra-low noise performance with extremely

high input impedance (> 1 TΩ). The JFE150 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high-leakage, nonlinear, external diodes.

The JFE150 can withstand a high drain-to-source

voltage of 40 V, as well as gate-to-source and gate-

to-drain voltages down to –40 V. The temperature

range is specified from –40°C to +125°C. The device

is offered in 5-pin SOT-23 and SC70 packages.

Package Information

PART NUMBER

PACKAGE(1)

BODY SIZE (NOM)

JFE150

DBV (SOT-23, 5)

2.90 mm × 1.60 mm

DCK (SC70, 5)

2.00 mm × 1.25 mm

(1)

For all available packages, see the package option

addendum at the end of the data sheet.

Device Summary

PARAMETER

VALUE

VGSS

Gate-to-source breakdown voltage

–40 V

VDSS

Drain-to-source breakdown voltage

±40 V

CISS

Input capacitance

24 pF

TJ

Junction temperature

–40°C to +125°C

IDSS

Drain-to-source saturation current

35 mA

VCH

VCL

G

S

D

Functional Block Diagram

Ultra-Low Input Voltage Noise

JFE150

SLPS732B – JUNE 2021 – REVISED APRIL 2023

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.