JFE150DBVT datasheet(5/29 Pages) TI

5 / 29 page

6.5 Electrical Characteristics

at TA = 25°C, IDS = 2 mA, and VDS = 10 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

NOISE

Input-referred voltage noise density

IDS = 100 µA , VDS = 5 V

f = 10 Hz

nV/√Hz

f = 1 kHz

IDS = 2 mA, VDS = 5 V

f = 10 Hz

1.6

f = 1 kHz

0.9

IDS = 5 mA, VDS = 5 V

f = 10 Hz

1.8

f = 1 kHz

0.8

Input-referred voltage noise

f = 0.1 Hz to 10 Hz,

VDS = 5 V

IDS = 100 µA

0.19

µVPP

IDS = 2 mA

0.09

IDS = 5 mA

0.13

Input current noise

f = 1 kHz, VDS = 5 V

1.8

fA/√Hz

INPUT CURRENT

Input gate current

VDS = 2 V, VGS = –0.7 V, VVCH = 5 V, VVCL = –5 V

0.2

±10

VDS = 0 V, VGS = –30 V

0.2

TA = –40°C to +85°C

±2000

TA = –40°C to +125°C

±10000

INPUT VOLTAGE

VGSS

Gate-to-source breakdown voltage

VDS = 0 V, |IG| < 100 µA

−40

VGSC

Gate-to-source cutoff voltage

VDS = 10 V, IDS = 0.1 µA

−1.5

−1.2

−0.9

VGS

Gate-to-source voltage

IDS = 100 µA

–1.3

–0.7

IDS = 2 mA

–1.1

–0.5

INPUT IMPEDANCE

RIN

Gate input resistance

VGS = –5 V to 0 V, VDS = 0 V

TΩ

CISS

Input capacitance

VDS = 0 V

VDS = 5 V

CRSS

Reverse transfer capacitance

VDS = 0 V

OUTPUT

IDSS

Drain-to-source saturation current

VDS = 10 V, VGS = 0 V

TA = –40°C to +125°C

Transconductance

IDS = 100 µA

IDS = 2 mA

GFS

Full conduction transconductance

VDS = 10 V, VGS = 0 V

VDSS

Drain-to-source breakdown voltage

|IDS| < 100 µA, VGS = –2 V

COSS

Output capacitance

VDS = 5 V

www.ti.com

JFE150

SLPS732B – JUNE 2021 – REVISED APRIL 2023

Submit Document Feedback

Product Folder Links: JFE150

JFE150DBVT датащи(PDF) 5 Page - Texas Instruments

JFE150DBVT датащи(HTML) 5 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29

датащи скачать

ссылки URL