6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VDS

Drain-to-source voltage

–40

40

V

VGS, VGD

Gate-to-source, gate-to-drain voltage

–40

0.9

V

VVCH

Voltage between VCH to D, G, or S

40

V

VVCL

Voltage between VCL to D, G, or S

–40

IVCL, IVCH

Clamp diode current

DC

20

mA

50-ms pulse(2)

200

IDS

Drain-to-source current

–50

50

mA

IGS, IGD

Gate-to-source, gate-to-drain current

–20

20

mA

TA

Ambient temperature

–55

150

°C

TJ

Junction temperature

–55

150

°C

Tstg

Storage temperature

–55

175

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Maximum diode current pulse specified for 50 ms at 1% duty cycle.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002((2))

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

IDS

Drain-to-source current

0.02

IDSS

mA

VGS

Gate-to-source voltage

0

–1.2

V

TA

Specified temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

JFE150

UNIT

DCK (SC70)

DBV (SOT-23)

5 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

197.1

183.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

93.7

83.2

°C/W

RθJB

Junction-to-board thermal resistance

44.8

51.7

°C/W

ψJT

Junction-to-top characterization parameter

16.7

24.9

°C/W

ψJB

Junction-to-board characterization parameter

44.6

51.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

JFE150

SLPS732B – JUNE 2021 – REVISED APRIL 2023

www.ti.com

4

Submit Document Feedback

Copyright © 2023 Texas Instruments Incorporated

Product Folder Links: JFE150