FN3983 Rev 5.00

Page 1 of 7

April 1998

FN3983

Rev 5.00

April 1998

HIP2060

60V, 10A Half Bridge Power MOSFET Array

DATASHEET

Features

• Two 10A Power MOS N-Channel Transistors

• Output Voltage to 60V

•rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V

•rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V

• Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor

• Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor

• Grounded Tab Eliminates Heat Sink Isolation

Description

The HIP2060 is a power half-bridge MOSFET array that con-

sists of two matched N-Channel enhancement-mode MOS

transistors. The advanced Intersil PASIC2 process technol-

ogy used in this product utilizes efficient geometries that pro-

vides outstanding device performance and ruggedness.

The HIP2060 is designed to integrate two power devices in

one chip thus providing board layout area and heat sink sav-

ings for applications such as Motor Controls, Uninterruptable

Power Supplies, Switch Mode Power Supplies, Voice Coil

Motors, and Class D Power Amplifier.

Symbol

Ordering Information

PART NUMBER

TEMP.

RANGE (oC)

PACKAGE

PKG.

NO.

HIP2060AS1

-40 to 125

5 Ld SIP

Z5.067C

HIP2060AS2

-40 to 125

5 Ld Gullwing SIP Z5.067A

HIP2060AS3

-40 to 125

5 Ld SIP

Z5.067B

NOTE: When ordering use the entire part number.

GATE1

GATE2

1

5

2

SOURCE1 = DRAIN2

4

SOURCE2

Z1

Z2

3, TAB

D1

DRAIN1

Packages

JEDEC TS-001AA (ALTERNATE VERSION)

HIP2060 AS1

JEDEC MO-169

HIP2060 AS2

Z5.067B (SIP)

HIP2060 AS3

5 4

3 2

1

(TAB)

5 DRAIN1

4 SOURCE1-DRAIN2

3 SOURCE2

2 GATE2

1 GATE1