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HIP2060AS2 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали HIP2060AS2
подробное описание детали  60V, 10A Half Bridge Power MOSFET Array
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP2060AS2 датащи(HTML) 4 Page - Renesas Technology Corp

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HIP2060
FN3983 Rev 5.00
Page 4 of 7
April 1998
Typical Performance Curves
FIGURE 1. SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BVDSS vs JUNCTION TEMPERATURE
1
5
10
50
100
5
10
50
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
1
DC
10ms
1ms
100
s
10
s
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
TC = 25oC
1
0.01
1
0.1
5
10
50
tAV, TIME IN AVALANCHE (ms)
0.001
STARTING TC = 25oC
STARTING TC = 125oC
0
2
4
6
8
10
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS = 15V
VGS = 12V
VGS = 10V
VGS = 8V
PULSE DURATION = 300
s, TC = 25oC
0
2
4
6
8
10
0
5
10
15
20
VGS, GATE-TO-SOURCE VOLTAGE (V)
150oC
25oC
-40oC
VDS = 15V
0
0.5
1.0
1.5
2.0
2.5
TJ, JUNCTION TEMPERATURE (oC)
-75
-25
25
75
125
175
PULSE DURATION = 300
s, VGS = 10V, ID = 10A
TJ, JUNCTION TEMPERATURE (oC)
-75
-25
25
75
125
175
0.8
0.9
1.0
1.1
1.2
ID = 100A



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