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HIP2060AS2 датащи(PDF) 5 Page - Renesas Technology Corp

номер детали HIP2060AS2
подробное описание детали  60V, 10A Half Bridge Power MOSFET Array
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP2060AS2 датащи(HTML) 5 Page - Renesas Technology Corp

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HIP2060
FN3983 Rev 5.00
Page 5 of 7
April 1998
FIGURE 7. NORMALIZED VGS(TH) vs JUNCTION
TEMPERATURE
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
FIGURE 9. CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Typical Performance Curves (Continued)
0
0.5
1.0
1.5
2.0
TJ, JUNCTION TEMPERATURE (oC)
-75
-25
25
75
125
175
VGS = VDS, ID = 250A
0
5
10
15
20
0
4
8
12
16
Q, GATE CHARGE (nC)
VDS = 50V
VDS = 30V
VDS = 20V
ID = 10A, TC = 25oC
0
5
10
15
20
25
0
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
CRSS
COSS(U)
COSS(L)
CISS
VGS = 0V, f = 1MHz, TC = 25oC
0
2
4
6
8
12
TC, CASE TEMPERATURE (oC)
25
50
75
100
125
150
10
VGS = 15V
VGS = 10V
0.01
0.1
1
10-5
10
10-4
10-3
10-2
10-1
10o
101
t1, RECTANGULAR PULSE DURATION (s)
NOTES:
1. DUTY FACTOR, D = t1/t2
2. PEAK TJ = PDM x (ZJC) +TC
0.2
0.5
0.1
0.05
0.02
0.01
TC = 25oC
D = 1.0
SINGLE PULSE



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