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CD4069UBMS датащи(PDF) 5 Page - Renesas Technology Corp

номер детали CD4069UBMS
подробное описание детали  CMOS Hex Inverter
PDF  8 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CD4069UBMS датащи(HTML) 5 Page - Renesas Technology Corp

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FN3321 Rev 0.00
Page 5 of 8
December 1992
CD4069UBMS
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
For additional products, see www.intersil.com/en/products.html
© Copyright Intersil Americas LLC 1999. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
 -0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1
(Note 1)
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11,
13
14
Static Burn-In 2
(Note 1)
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13,
14
Dynamic Burn-In
(Note 1)
-
7
14
2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13
Irradiation
(Note 2)
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11, 13,
14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
 5%, VDD = 18V  0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V
 0.5V
Typical Performance Characteristics
FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER
CHARACTERISTICS
FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERIS-
TICS AS A FUNCTION OF TEMPERATURE
AMBIENT TEMPERATURE (TA) = +25oC
VI
VO
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0
12.5
15.0
INPUT VOLTAGE (VI) (V)
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0 12.5 15.0
INPUT VOLTAGE (VI) (V)
17.5
17.5 20.0
-55oC
-55oC
-55oC
+125oC
AMBIENT TEMPERATURE (TA)
= +125oC



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