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AT45DB321E датащи(PDF) 68 Page - Renesas Technology Corp |
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AT45DB321E датащи(HTML) 68 Page - Renesas Technology Corp |
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68 / 69 page ![]() 8784 M 2/2022 Changed company logo to Renesas. 68 AT45DB321E 8784M–DFLASH–02/2022 28. Revision History Doc. Rev. Date Comments 8784A 08/2012 Initial document release. 8784B 11/2012 Added Legacy Commands table. Updated to Adesto template. 8784C 6/2013 Updated electrical and power specifications. “ Buffer 1 (or 2) Read” moved from group C to Group A in Operation Mode Summary. Removed references to 2.5V minimum power supply. 8784D 7/2013 Updated Auto Page Rewrite cycle to 50,000 cumulative page erase/program operations. Corrected Page Erase and Programming Time specification to 35 ms maximum. Updated DC conditions for V OL, ICC3 and ICC4. Added reserved part order codes. Changed datasheet status from preliminary to complete. 8784E 10/2013 Updated spec in Continuous Array Read (1Bh Opcode) to f CAR4. Corrected Low Power Read Option (up to 15MHz). Corrected Ultra-Deep Power-Down current (400nA typical). Updated spec for Input High Voltage (Max) to VCC + 0.6V. 8784F 11/2013 Corrected Product ID Values for Byte 2 in Figure 12.1, Table 12.1 and Table 12.2. Corrected Memory Architecture Diagram, Figure 3-1. 8784G 7/2015 Added Die in Wafer Form package option. Added explanation of Read-Modify-Write command (Section 6.6).Updated Table 6-4 (Main Memory to Buffer Compare). Added information on Power Up (Section 15.1). Added footnotes to Tables 14-6 and 14-7. Updated Tables 11-1 and 11-3. Updated condition description for I UDPD, IDPD, and ISB. 8784H 1/2017 Added patent information. 8784I 6/2017 Added clarification of Absolute Maximum Ratings. 8784J 8/2017 Updated 6 x 8 VDFN package drawing. 8784K 9/2017 Updated maximum page program time specification. 8784L 3/2019 Removed 9CC, 9-ball UBGA package option. Updated tVCSL time in Table 15-1 from 85 to 105 µs. |
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