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AT45DB321E датащи(PDF) 49 Page - Renesas Technology Corp |
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AT45DB321E датащи(HTML) 49 Page - Renesas Technology Corp |
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49 / 69 page ![]() 49 AT45DB321E 8784M–DFLASH–02/2022 17.5 Program and Erase Characteristics Notes: 1. Values are based on device characterization, not 100% tested in production. 2. Not 100% tested (value guaranteed by design and characterization). 18. Input Test Waveforms and Measurement Levels 19. Output Test Load Symbol Parameter Min Typ Max Units t EP Page Erase and Programming Time (512/528 bytes) 17 35 ms t P Page Programming Time 3 5.5 ms tBP Byte Programming Time 8 µs t PE Page Erase Time 12 35 ms t BE Block Erase Time 45 100 ms tSE Sector Erase Time 0.7 1.4 s t CE Chip Erase Time 45 80 s t SUSP Suspend Time Program 10 15 µs Erase 20 30 t RES Resume Time Program 10 15 µs Erase 20 30 tOTPP OTP Security Register Program Time 200 500 µs AC Driving Levels AC Measurement Level 0.1V CC V CC/2 0.9V CC tR, tF < 2ns (10% to 90%) Device Under Test 30pF |
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