поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

STGSB200M65DF2AG датащи(PDF) 8 Page - STMicroelectronics

номер детали STGSB200M65DF2AG
подробное описание детали  Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package
PDF  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGSB200M65DF2AG датащи(HTML) 8 Page - STMicroelectronics

Back Button STGSB200M65DF2AG Datasheet HTML 4Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 5Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 6Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 7Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 8Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 9Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 10Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 11Page - STMicroelectronics STGSB200M65DF2AG Datasheet HTML 12Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 17 page
background image
Figure 19. Switching times vs collector current
GADG301020201015STC
10 2
10 1
0
100
200
300
400
t
(ns)
IC (A)
td(off)
tf
td(on)
tr
VCC = 400 V,
RG = 4.7 Ω,
VGE = -8 to 15 V
Figure 20. Switching times vs gate resistance
GADG250520200747STR
10 2
10 1
0
5
10
15
20
t
(ns)
RG (Ω)
VCC = 400 V,
IC = 200 A,
VGE = -8 to 15 V
td(off)
tr
tf
td(on)
Figure 21. Reverse recovery current vs diode current
slope
GADG250520200749RRC
200
150
100
50
0
1000
2000
3000
4000
Irrm
(A)
di/dt (A/µs)
TJ = 175 °C
TJ = 25 °C
IF = 200 A,VR = 400 V
VGE = -8 to 15 V
Figure 22. Reverse recovery time vs diode current slope
GADG250520200751RRT
350
300
250
200
150
100
1000
2000
3000
4000
trr
(ns)
di/dt (A/µs)
IF = 200 A,VR = 400 V
VGE = -8 to 15 V
TJ = 175 °C
TJ = 25 °C
Figure 23. Reverse recovery charge vs diode current
slope
GADG250520200752RRQ
25
20
15
10
5
1000
2000
3000
4000
Qrr
(µC)
di/dt (A/µs)
TJ = 175 °C
IF = 200 A,VR = 400 V
VGE = -8 to 15 V
TJ = 25 °C
Figure 24. Reverse recovery energy vs diode current
slope
GADG250520200753RRE
8
6
4
2
0
1000
2000
3000
4000
Err
(mJ)
di/dt (A/µs)
IF = 200 A,VR = 400 V
VGE = -8 to 15 V
TJ = 175 °C
TJ = 25 °C
STGSB200M65DF2AG
Electrical characteristics (curves)
DS13367 - Rev 3
page 8/17



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com