STGSB200M65DF2AG datasheet(5/17 Pages) STMICROELECTRONICS

номер детали	STGSB200M65DF2AG

подробное описание детали	Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package

PDF	17 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG250520200913PDT

600

400

200

-50

100

150

PTOT

(W)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

GADG250520200914CCT

200

160

120

-50

100

150

(A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

GADG250520200908OC25

160

120

0.0

0.5

1.0

1.5

2.0

2.5

(A)

VCE (V)

13 V

VGE = 7 V

9 V

11 V

VGE = 15, 17, 19 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG250520200909OC175

160

120

0.0

0.5

1.0

1.5

2.0

2.5

(A)

VCE (V)

VGE = 7 V

9 V

11 V

13 V

VGE = 15, 17, 19 V

Figure 5. VCE(sat) vs junction temperature

GADG250520200912VCET

2.6

2.2

1.8

1.4

1.0

-50

100

150

VCE(sat)

(V)

TJ (°C)

VGE = 15 V,

IC = 200 A

Figure 6. VCE(sat) vs collector current

GADG250520200910VCEC

160

120

0.0

0.5

1.0

1.5

2.0

2.5

(A)

VCE(sat) (V)

TJ = -40 °C

TJ = 175 °C

TJ = 25 °C

VGE = 15 V

STGSB200M65DF2AG

Electrical characteristics (curves)

DS13367 - Rev 3

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