STGSB200M65DF2AG datasheet(6/17 Pages) STMICROELECTRONICS

номер детали	STGSB200M65DF2AG

подробное описание детали	Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package

PDF	17 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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Figure 7. Collector current vs switching frequency

GADG250520200915CCS

500

400

300

200

100

10-1

100

101

(A)

f (kHz)

TJ = 100 °C

TJ = 80 °C

Rectangular current shape

(duty cycle = 0.5,

VGE = 0 to 15 V, TJ = 175 °C)

VCC = 400 V, RG = 4.7 Ω

Figure 8. Forward bias safe operating area

GADG250520200805FSOA

102

101

100

10-1

10 0

10 1

10 2

(A)

VCE (V)

tp =10µs

tp =100µs

tp =1ms

tp =10ms

V(BR)CES

Single pulse

TJ = 175 °C,

TC = 25 °C,

VCE(sat)

Figure 9. Transfer characteristics

GADG250520200911TCH

160

120

(A)

VGE (V)

TJ = 175 °C

TJ = 25 °C

VCE = 6 V

Figure 10. Diode VF vs forward current

GADG250520200911DVF

160

120

0.0

0.5

1.0

1.5

2.0

(A)

VF (V)

TJ = 175 °C

TJ = -40 °C

TJ = 25 °C

Figure 11. Normalized VGE(th) vs junction temperature

-50

100

150

T J (ºC)

0.6

0.7

0.8

0.9

1.0

1.1

VCE = VGE ,

IC = 1 mA

VGE(th)

(norm.)

GADG250520200929NVGE

Figure 12. Normalized V(BR)CES vs junction temperature

-50

100

150

T J (ºC)

0.90

0.94

0.98

1.02

1.06

V(BR)CES

(norm.)

IC = 1 mA

GADG250520200931NVBR

STGSB200M65DF2AG

Electrical characteristics (curves)

DS13367 - Rev 3

page 6/17

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