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BC69PAS датащи(PDF) 9 Page - Nexperia B.V. All rights reserved |
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BC69PAS датащи(HTML) 9 Page - Nexperia B.V. All rights reserved |
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9 / 15 page ![]() BC69PAS_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2015. All rights reserved. Product data sheet Rev. 1 — 19 June 2015 9 of 15 Nexperia BC69PAS series 20 V, 2 A PNP medium power transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. VCE = 1V (1) Tamb = 55 C (2) Tamb =25 C (3) Tamb = 100 C IC/IB =10 (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 55 C Fig 13. hFE selection -25: Base-emitter voltage as a function of collector current; typical values Fig 14. hFE selection -25: Collector-emitter saturation voltage as a function of collector current; typical values 006aac708 -0.4 -0.8 -1.2 VBE (V) 0.0 IC (mA) -10-1 -104 -103 -1 -102 -10 (1) (2) (3) aaa-018434 -10-1 -10-2 -1 VCEsat (V) -10-3 IC (mA) -10-1 -104 -103 -1 -102 -10 (2) (3) (1) |
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