BC69PAS_SER

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Nexperia B.V. 2015. All rights reserved.

Product data sheet

Rev. 1 — 19 June 2015

7 of 15

Nexperia

BC69PAS series

20 V, 2 A PNP medium power transistors

7.

Characteristics

[1]

Pulse test: tp  300 ms;  0.02

Table 7.

Characteristics

Tamb = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

VCB = 25 V; IE =0A

-

-

100 nA

VCB = 25 V; IE =0A; Tj = 150 C-

-

10

A

IEBO

emitter-base cut-off current

VEB = 5V;IC =0A

-

-

100 nA

hFE

DC current gain

VCE = 10 V; IC = 5mA

50

-

-

VCE = 1V; IC = 500 mA

[1] 85

-

375

VCE = 1V; IC = 1A

[1] 60

-

-

VCE = 1V; IC = 2A

[1] 40

-

-

hFE selection-16

VCE = 1V; IC = 500 mA

[1] 100

-

250

hFE selection-25

VCE = 1V; IC = 500 mA

[1] 160

-

375

VCEsat

collector-emitter saturation

voltage

IC = 1A; IB = 100 mA

[1] --

0.5

V

IC = 2A; IB = 200 mA

[1] --

0.6

V

VBE

base-emitter voltage

IC = 5mA; VCE = 10 V

[1] --

0.7

V

IC = 1A; VCE = 1V

[1] --

1V

fT

transition frequency

VCE = 5V; IC = 50 mA; f = 100 MHz

40

140

-

MHz

Cc

collector capacitance

VCB = 10 V; IE = ie =0A; f=1MHz

-

28

-

pF

VCE = 1V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb = 25 C

Fig 7.

hFE selection -16: DC current gain as a

function of collector current; typical values

Fig 8.

hFE selection -16: Collector current as a

function of collector-emitter voltage; typical

values

006aac697

100

200

300

hFE

0

IC (A)

-10-4

-10

-1

-10-3

-10-1

-10-2

(1)

(2)

(3)

006aab403

0

IC

(A)

VCE (V)

−2.4

−1.6

−2.0

−0.8

−1.2

−0.4

0

−1

−5

−2

−3

−4

IB (mA) = −18.0

−16.2

−3.6

−5.4

−7.2

−9.0

−14.4

−12.6

−10.8

−1.8