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FAM65V05DF1 датащи(PDF) 11 Page - ON Semiconductor |
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FAM65V05DF1 датащи(HTML) 11 Page - ON Semiconductor |
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11 / 16 page ![]() FAM65V05DF1 www.onsemi.com 11 TYPICAL INVERTER CHARACTERISTICS (continued) Figure 12. Reverse Recovery Energy DIODE Inverter (Typical) versus Forward Current VCC = VBS = 15 V VIN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C IF, Forward Current (A) Figure 13. Reverse Bias Safe Operating Area IGBT (RBSOA) Inverter VCC = VBS = 15 V, Tj = 150°C Time Duration (s) Figure 14. Transient Thermal Impedance IGBT Inverter Figure 15. Transient Thermal Impedance DIODE Inverter 0.00 0.10 0.20 0.30 0.40 0.50 0 20406080 100 ERR, VPN = 450 V, HS ERR, VPN = 450 V, LS ERR, VPN = 300 V, HS ERR, VPN = 300 V, LS 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 IC Module IC Chip VCE (V) 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 ZthJC IGBT i: 1 2 3 4 ri [°C/W]: 0.0264 0.0615 0.132 0.05 t [s]: 6.04e−6 5.8e−5 1.25e−3 5.14e−3 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 ZthJC DIODE Time Duration (s) i: 1 2 3 4 ri [°C/W]: 0.0070 0.1389 0.2439 0.1411 t [s]: 1.05e−5 1.31e−4 2.09e−3 5.86e− |
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