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FAM65V05DF1 датащи(PDF) 10 Page - ON Semiconductor

номер детали FAM65V05DF1
подробное описание детали  Auto SPM Series Automotive 3-Phase IGBT Smart Power Module
PDF  16 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FAM65V05DF1 датащи(HTML) 10 Page - ON Semiconductor

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10
TYPICAL INVERTER CHARACTERISTICS
Figure 8. Output Characteristics IGBT Inverter
(Typical)
VCC = VBS = 15 V, VIN = 5 V
0
10
20
30
40
50
60
70
80
90
100
012
34
VCE (V)
TJ = 25°C
TJ = 125°C
TJ = 150°C
0
10
20
30
40
50
60
70
80
90
100
01
234
TJ = 25°C
TJ = 125°C
TJ = 150°C
VCE (V)
Figure 9. Forward Characteristics DIODE Inverter
(Typical)
VIN = 0 V
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0
2040
6080
100
EON, VPN = 450 V
EOFF, VPN = 450 V
EON, VPN = 300 V
EOFF, VPN = 300 V
IC, Collector Current (A)
Figure 10. Switching Losses IGBT Inverter High−Side
(Typical) versus Collector Current
VCC = VBS = 15 V
VIN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
0
20406080
100
EON, VPN = 450 V
EOFF, VPN = 450 V
EON, VPN = 300 V
EOFF, VPN = 300 V
IC, Collector Current (A)
Figure 11. Switching Losses IGBT Inverter Low−Side
(Typical) versus Collector Current
VCC = VBS = 15 V
VIN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C



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