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TLP5231 датащи(PDF) 4 Page - Toshiba Semiconductor

номер детали TLP5231
подробное описание детали  Photocouplers Infrared LED & Photo IC
PDF  30 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP5231 датащи(HTML) 4 Page - Toshiba Semiconductor

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TLP5231
4
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
LED
(controller
side)
Detector
(gate
driver
side)
Common
Characteristics
Input forward current
Input forward current derating
Peak transient input forward
current
Peak transient input forward
current derating
Input reverse voltage
Positive input supply voltage
FAULT output current
FAULT terminal voltage
Input power dissipation
Input power dissipation
derating
Peak high-level output current
Peak low-level output current
Total output supply voltage
Negative output supply voltage
Positive output supply voltage
High side output voltage
Low side output voltage
DESAT voltage
VGMOS voltage
Output power dissipation
Output power dissipation
derating
Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(Ta ≥ 95 )
(Ta ≥ 95 )
(Ta ≥ 95 )
(Ta = -40 to 110 )
(Ta = -40 to 110 )
(Ta ≥ 95 )
(10 s)
(AC, 60 s, R.H. ≤ 60 %)
Symbol
IF
∆IF/∆Ta
IFPT
∆IFPT/∆Ta
VR
VCC1
IFAULT
VFAULT
PD
∆PD/∆Ta
IOPH
IOPL
(VCC2-VEE)
(VE-VEE)
(VCC2-VE)
VOUTP(Peak)
VOUTN(Peak)
VDESAT
VGMOS
PO
∆PO/∆Ta
Topr
Tstg
Tsol
BVS
Note
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 4)
(Note 4)
(Note 2)
(Note 5)
(Note 6)
Rating
25
-0.84
1
-34
5
-0.5 to 7
8
-0.5 to VCC1
150
-5.0
-2.5
+2.5
-0.5 to 35
-0.5 to 17
-0.5 to 30
VE - 0.5 to VCC2 + 0.5
VEE - 0.5 to VE + 0.5
VE - 0.5 to VCC2 + 0.5
VEE - 0.5 to VE + 0.5
410
-14.0
-40 to 110
-55 to 125
260
5000
Unit
mA
mA/
A
mA/
V
V
mA
V
mW
mW/
A
A
V
V
V
V
V
V
V
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 1µs, 300pps
Note 2: Mounting on the substrate made in accordance with JEDEC JESD51-7.
Note 3: Exponential waveform. Pulse width ≤ 0.2 µs, f ≤ 15 kHz, VCC2 = 15 V
Note 4: Positive and Negative power supply (VCC2/VEE) must be used in the gate drive circuit.
Note 5: ≥ 2 mm below seating plane.
Note 6: This device is considered as a two-terminal device: Pins 1 through 8 are shorted together, and pins 9 through
16 are shorted together.
2020-03-02
Rev.2.0
©2019-2020
Toshiba Electronic Devices & Storage Corporation



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