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TLP5231 датащи(PDF) 4 Page - Toshiba Semiconductor |
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TLP5231 датащи(HTML) 4 Page - Toshiba Semiconductor |
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4 / 30 page ![]() TLP5231 4 7. 7. 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) LED (controller side) Detector (gate driver side) Common Characteristics Input forward current Input forward current derating Peak transient input forward current Peak transient input forward current derating Input reverse voltage Positive input supply voltage FAULT output current FAULT terminal voltage Input power dissipation Input power dissipation derating Peak high-level output current Peak low-level output current Total output supply voltage Negative output supply voltage Positive output supply voltage High side output voltage Low side output voltage DESAT voltage VGMOS voltage Output power dissipation Output power dissipation derating Operating temperature Storage temperature Lead soldering temperature Isolation voltage (Ta ≥ 95 ) (Ta ≥ 95 ) (Ta ≥ 95 ) (Ta = -40 to 110 ) (Ta = -40 to 110 ) (Ta ≥ 95 ) (10 s) (AC, 60 s, R.H. ≤ 60 %) Symbol IF ∆IF/∆Ta IFPT ∆IFPT/∆Ta VR VCC1 IFAULT VFAULT PD ∆PD/∆Ta IOPH IOPL (VCC2-VEE) (VE-VEE) (VCC2-VE) VOUTP(Peak) VOUTN(Peak) VDESAT VGMOS PO ∆PO/∆Ta Topr Tstg Tsol BVS Note (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 4) (Note 4) (Note 4) (Note 2) (Note 5) (Note 6) Rating 25 -0.84 1 -34 5 -0.5 to 7 8 -0.5 to VCC1 150 -5.0 -2.5 +2.5 -0.5 to 35 -0.5 to 17 -0.5 to 30 VE - 0.5 to VCC2 + 0.5 VEE - 0.5 to VE + 0.5 VE - 0.5 to VCC2 + 0.5 VEE - 0.5 to VE + 0.5 410 -14.0 -40 to 110 -55 to 125 260 5000 Unit mA mA/ A mA/ V V mA V mW mW/ A A V V V V V V V mW mW/ Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) ≤ 1µs, 300pps Note 2: Mounting on the substrate made in accordance with JEDEC JESD51-7. Note 3: Exponential waveform. Pulse width ≤ 0.2 µs, f ≤ 15 kHz, VCC2 = 15 V Note 4: Positive and Negative power supply (VCC2/VEE) must be used in the gate drive circuit. Note 5: ≥ 2 mm below seating plane. Note 6: This device is considered as a two-terminal device: Pins 1 through 8 are shorted together, and pins 9 through 16 are shorted together. 2020-03-02 Rev.2.0 ©2019-2020 Toshiba Electronic Devices & Storage Corporation |
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