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ADRF5144BCCZN-R7 датащи(PDF) 1 Page - Analog Devices |
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ADRF5144BCCZN-R7 датащи(HTML) 1 Page - Analog Devices |
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1 / 12 page ![]() Data Sheet ADRF5144 10 W Average, Silicon SPDT, Reflective Switch, 1 GHz to 20 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Wideband frequency range: 1 GHz to 20 GHz ► Low insertion loss: 0.8 dB typical to 20 GHz ► High Isolation: 52 dB typical to 20 GHz ► High input linearity ► 0.1 dB power compression (P0.1dB): 44 dBm ► Third order intercept (IP3): >70 dBm ► Second order intercept (IP2): >120 dBm ► High power handling at TCASE = 85°C: ► Insertion loss path ► Average: 40 dBm ► Pulsed (>100 ns pulse width, 15% duty cycle): 43 dBm ► Peak (≤100 ns peak duration, 5% duty cycle): 44 dBm ► Hot-switching: 37 dBm ► 0.1 dB RF settling time with PIN ≤ 37 dBm: 750 ns ► No low frequency spurious ► Positive control interface: CMOS/LVTTL-compatible ► 20-lead, 3.0 mm × 3.0 mm LGA package ► Pin compatible with ADRF5141 APPLICATIONS ► Military radios, radars, and electronic counter measures ► Satcom ► Test and instrumentation ► GaN and PIN diode replacement FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram GENERAL DESCRIPTION The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process. The ADRF5144 operates from 1 GHz to 20 GHz with typical inser- tion loss of 0.8 dB and typical isolation of 52 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and 44 dBm peak power for the insertion loss path. The ADRF5144 draws a low current of 130 μA on the positive sup- ply of +3.3 V and 510 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low- voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches. The ADRF5144 can also operate with a single positive supply volt- age (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated, see Table 2. The ADRF5144 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-com- pliant, land grid array (LGA) package and can operate from −40°C to +85°C. |
Аналогичный номер детали - ADRF5144BCCZN-R7 |
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Аналогичное описание - ADRF5144BCCZN-R7 |
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