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ADRF5144BCCZN-R7 датащи(PDF) 1 Page - Analog Devices

номер детали ADRF5144BCCZN-R7
подробное описание детали  10 W Average, Silicon SPDT, Reflective Switch, 1 GHz to 20 GHz
PDF  12 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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ADRF5144BCCZN-R7 датащи(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5144
10 W Average, Silicon SPDT, Reflective Switch, 1 GHz to 20 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Wideband frequency range: 1 GHz to 20 GHz
Low insertion loss: 0.8 dB typical to 20 GHz
High Isolation: 52 dB typical to 20 GHz
High input linearity
0.1 dB power compression (P0.1dB): 44 dBm
Third order intercept (IP3): >70 dBm
Second order intercept (IP2): >120 dBm
High power handling at TCASE = 85°C:
Insertion loss path
Average: 40 dBm
Pulsed (>100 ns pulse width, 15% duty cycle): 43 dBm
Peak (≤100 ns peak duration, 5% duty cycle): 44 dBm
Hot-switching: 37 dBm
0.1 dB RF settling time with PIN ≤ 37 dBm: 750 ns
No low frequency spurious
Positive control interface: CMOS/LVTTL-compatible
20-lead, 3.0 mm × 3.0 mm LGA package
Pin compatible with ADRF5141
APPLICATIONS
Military radios, radars, and electronic counter measures
Satcom
Test and instrumentation
GaN and PIN diode replacement
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5144 is a reflective, single pole double-throw (SPDT)
switch manufactured in the silicon process.
The ADRF5144 operates from 1 GHz to 20 GHz with typical inser-
tion loss of 0.8 dB and typical isolation of 52 dB. The device has
a radio frequency (RF) input power handling capability of 40 dBm
average power and 44 dBm peak power for the insertion loss path.
The ADRF5144 draws a low current of 130 μA on the positive sup-
ply of +3.3 V and 510 μA on negative supply of −3.3 V. The device
employs complementary metal-oxide semiconductor (CMOS)-/low-
voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5144 requires no additional driver circuitry, which makes
it an ideal alternative to GaN and PIN diode-based switches.
The ADRF5144 can also operate with a single positive supply volt-
age (VDD) applied while the negative supply voltage (VSS) is tied to
ground. In this operating condition, the small signal performance is
maintained while the switching characteristics, linearity, and power
handling performance are derated, see Table 2.
The ADRF5144 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-com-
pliant, land grid array (LGA) package and can operate from −40°C
to +85°C.


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