M28R400CT-KGD datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

M28R400CT-KGD, M28R400CB-KGD

4/11

FUNCTIONAL SPECIFICATION

Refer to the M28R400C (document number 7653

on the ST Internet web site http://www.st.com) for

full functional and electrical specifications of the

product.

Table 2. and Table 3. give the main product spec-

ification and operating conditions while Table 4.

and Table 5. summarize the Read and Write AC

parameters which differ from those given in the

M28R400C datasheet.

See Table 6. and Table 7. for details of the die’s

physical specification and manufacturing.

Table 2. Product Specification

Table 3. Operating Conditions

Table 4. Read AC Characteristics

Table 5. Write AC Characteristics

Table 6. Physical Specification

Table 7. Manufacturing Information

Product Root Part Number

M28R400CT

M28R400CB

Speed Option

100ns

Delivery Form

Inked or mapped dice on

whole unsawn wafer

Supply Voltage

VDD = VDDQ = 1.65V to 2.2V

Junction Temperature

Under Bias

TJ (max) = 125°C

Operating Temperature

−40°C to +85°C

Symbol

Description

Value

Unit

tAVAV

Address Valid to Next

Address Valid (min)

100

tAVQV

Address Valid to Output

Valid (max)

100

tEHQZ

Chip Enable High to

Output Hi-Z (max)

tELQV

Chip Enable Low to

Output Valid (max)

100

tGHQZ

Output Enable High to

Output Hi-Z (max)

tGLQV

Output Enable Low to

Output Valid (max)

Symbol

Description

Value

Unit

tAVAV

Address Valid to Next

Address Valid (min)

100

tELQV

Chip Enable Low to

Output Valid (max)

100

Die Dimensions, X by Y

(with scribe line)

141.024 mils x 98.504 mils

3.582mm x 2.502mm

Die Dimensions, X by Y

(without scribe line)

137.008mils x 94.488mils

3.480mm x 2.400mm

Die Thickness

9.84 mils

725µm

Bond Pad Size

3.56 mils x 3.56 mils

90.4µm x 90.4µm

Pad Area Free of

Passivation

12.67 mils²

8172µm²

Pad per Die

Bond Pad Metallization

AlCU, TiN

Die Backside

No Metal

May be grounded

Passivation

USG, Si3N4

Manufacturing Location -

Die Revision

Catania (M5 fab), Italy – V2

Manufacturing Location -

Die Revision

Agrate (R2 fab), Italy – V1

Wafer Sort and Test

Location

Agrate and Catania, Italy

Manufacturing ID

SA2B9AZ

Preparation for Shipment

Agrate and Catania, Italy

Fabrication Process

0.18µm technology

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