6.5 Electrical Characteristics (continued)

VIN = VOUT(NOM) + 0.5 V or 1.6 V, whichever is greater; VEN = 1.35 V, CIN = 1 μF, COUT = 1 μF, IOUT = 1 mA (unless otherwise

stated).(1) (2) (3)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PGLTH

PG low threshold (% of

nominal VOUT)

86

90

93

%

VOL(PG)

PG pin low-level output voltage VOUT < PGLTH, sink current = 1 mA

400

mV

ILKG(PG)

PG pin leakage current

VOUT < PGHTH, VPG = 6 V

1

µA

TRANSITION CHARACTERISTICS

ΔVOUT

Line transients (9)

For VIN ↑ and VOUT(NOM) ≥ 1.1 V,

VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1.1 V),

VIN trise = 30 µs

1

mV

For VIN ↑ and VOUT(NOM) < 1.1 V,

VIN = 1.6 V to 2.2 V,

VIN trise = 30 µs

For VIN ↓ and VOUT(NOM) ≥ 1.1 V,

VIN = (VOUT(NOM) + 0.5 V) to (VOUT(NOM) + 1.1 V),

VIN trise = 30 µs

-1

For VIN ↓ and VOUT(NOM) < 1.1 V,

VIN = 1.6 V to 2.2 V,

VIN trise = 30 µs

Load transients (9)

IOUT = 5 mA to 500 mA,

IOUT tRISE = 10 μs

-45

mV

IOUT = 500 mA to 5 mA,

IOUT tFALL = 10 μs

45

Overshoot on start-up (9)

5

%

tON

Turnon time

From VEN > VEN(ON) to VOUT = 95% of VOUT(NOM)

200

µs

OUTPUT AUTO DISCHARGE RATE

RAD

Output discharge pulldown

resistance

VEN = 0 V, VIN = 3.6 V

100

Ω

(1)

All voltages are with respect to the device GND pin, unless otherwise stated.

(2)

Minimum and maximum limits are specified through test, design, or statistical correlation over the junction temperature (TJ ) range of

–55°C to +125°C, unless otherwise stated. Typical values represent the most likely parametric norm at TA = 25°C, and are provided for

reference purposes only.

(3)

In applications where high power dissipation and poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP

= 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of

the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

(4)

Short-circuit current (ISC) is equivalent to current limit. To minimize thermal effects during testing, ISC is measured with VOUT pulled to

100 mV below its nominal voltage.

(5)

Reverse current (IRO) is measured at the IN pin.

(6)

Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT.

(7)

Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device (IQ + IEN).

(8)

Dropout voltage (VDO) is the voltage difference between the input and the output at which the output voltage drops to 150 mV below its

nominal value when VIN = VOUT + 0.5 V. Dropout voltage is not a valid condition for output voltages less than 1.6 V as compliance with

the minimum operating voltage requirement cannot be assured.

(9)

This specification is specified by design.

(10) There is a 3-MΩ pulldown resistor between the EN pin and GND pin on the device.

6.6 Output and Input Capacitors

over operating free-air temperature range (unless otherwise noted)

PARAMETERS

TEST CONDITIONS

MIN

NOM

MAX

UNIT

CIN

Input capacitance (1)

Capacitance for stability

0.7

1

µF

COUT

Output capacitance (1)

Capacitance for stability

0.7

1

10

µF

COUT_ESR

Output capacitor ESR(1)

5

500

mΩ

(1)

This specification is verified by design.

LP5912-EP

SNVSC57 – SEPTEMBER 2022

www.ti.com

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