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STM32H753II датащи(PDF) 176 Page - STMicroelectronics

номер детали STM32H753II
подробное описание детали  32-bit Arm® Cortex®-M7 480MHz MCUs, 2MB Flash,1MB RAM, 46 com. and analog interfaces, crypto
PDF  361 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32H753II датащи(HTML) 176 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H753xI
176/360
DS12117 Rev 8
6.3.24
Temperature and VBAT monitoring
2. Guaranteed by characterization.
3. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1
byte.
Table 92. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
Temperature sensor raw data acquired value at
30 °C, VDDA=3.3 V
0x1FF1 E820 -0x1FF1 E821
TS_CAL2
Temperature sensor raw data acquired value at
110 °C, VDDA=3.3 V
0x1FF1 E840 - 0x1FF1 E841
Table 93. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-26
-
KΩ
Q
Ratio on VBAT measurement
-
4
-
-
Er(1)
1. Guaranteed by design.
Error on Q
–10
-
+10
%
tS_vbat(1)
ADC sampling time when reading VBAT input
9
-
-
µs
VBAThigh
High supply monitoring
-
3.55
-
V
VBATlow
Low supply monitoring
-
1.36
-
Table 94. VBAT charging characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
RBC
Battery charging resistor
VBRS in PWR_CR3= 0
-
5
-
KΩ
VBRS in PWR_CR3= 1
1.5
-
Table 95. Temperature monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TEMPhigh
High temperature monitoring
-
117
-
°C
TEMPlow
Low temperature monitoring
-
–25
-



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