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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STW18N60M2 датащи(PDF) 4 Page - STMicroelectronics |
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STW18N60M2 датащи(HTML) 4 Page - STMicroelectronics |
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4 / 27 page  Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 13 A ISDM (1) Source-drain current (pulsed) - 52 A VSD (2) Forward on voltage ISD = 13 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 305 ns Qrr Reverse recovery charge - 3.3 µC IRRM Reverse recovery current - 22 A trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 417 ns Qrr Reverse recovery charge - 4.6 µC IRRM Reverse recovery current - 22 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2 Electrical characteristics DS9714 - Rev 4 page 4/27 |
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