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STW18N60M2 датащи(PDF) 2 Page - STMicroelectronics

номер детали STW18N60M2
подробное описание детали  N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages
PDF  27 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW18N60M2 датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
13
A
ID
Drain current (continuous) at TC = 100 °C
8
A
IDM (1)
Drain current (pulsed)
52
A
PTOT
Total power dissipation at TC = 25 °C
110
W
dv/dt (2)
Peak diode recovery voltage slope
15
V/ns
dv/dt (3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
- 55 to 150
°C
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
I2PAK
TO-220
TO-247
Rthj-case
Thermal resistance junction-case
1.14
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
50
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
30
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
3
A
EAS
Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)
135
mJ
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical ratings
DS9714 - Rev 4
page 2/27



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