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STM8501 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STM8501
подробное описание детали  Dual E nhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8501 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
4
5
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
VGS=3V
-55 C
20
15
10
5
1
0
0
0.8
1.6
2.4
3.2
4.0
4.8
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =1.7A
N-Ch
0.8
1.2
-0.78
-1.2
VGS = 0V, Is =-1.7A
P-Ch
V
b
C
Notes
c.Guaranteed by design,not subject to production testing.
b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.
＜
＜
a.Surface Mounted on FR4 Board,t 10sec.
＜
N-Channel
VGS=3.5V
25 C
Tj=125 C
VGS=4.5V
VGS=10V
S T M8501
ID, Drain C urrent (A)
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
60
50
40
30
20
10
0
10
15
20
25
0
V GS =10V
V GS =4.5V
5
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
T j( C )
T j, J unction T emperature ( C )
2.0
1.8
1.6
1.4
1.2
1.0
0
0
25
50
125
100
75
V GS =10V
ID=4.5A
V GS =4.5V
ID=4A
150
d.Guaranteed when external R g=6 ohm and tf < tf max.



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