STM8501 datasheet(1/11 Pages) SAMHOP

номер детали	STM8501

подробное описание детали	Dual E nhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

J an.10 2006

ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

Parameter

S ymbol

N-Channel P-Channel

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

V

Drain Current-Continuous @ Ta

-Pulsed

ID

2

A

W

IDM

Drain-S ource Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

C

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient

62.5

/W

C

a

b

55

1.7

-55

-1.7

1

P R ODUC T S UMMAR Y

V DS S

ID

R DS (ON) ( m W ) Max

55V

5A

50 @ VGS = 10V

70 @ V GS = 4.5V

S O-8

1

2

3

4

8

7

6

5

S 1

G 1 S 2

G 2

D1

D2

(N-C hannel)

P R ODUC T S UMMAR Y

V DS S

ID

-55V

- 3.5A

80

@ V GS = -10V

@ V GS = -4.5V

(P -C hannel)

S amHop Microelectronics C orp.

20

- 18

R JA

S T M8501

R DS (ON) ( m W ) Max

25 C

70 C

Ta= 25 C

Ta=70 C

1.44

-

A

100

2.8

- 3.5

Drain-S ource Voltage R ating

Vspike

-60

60

V

5

4.2

22

d

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