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STM8501 датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STM8501
подробное описание детали  Dual E nhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8501 датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-55
V
Zero Gate Voltage Drain Current
IDSS
VDS -44V, VGS 0V
=
=
-1
Gate-Body Leakage
IGSS
VGS 20V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = -250uA
=
-1.0
-
V
Drain-Source On-State R esistance
R DS(ON)
VGS -10V, ID -3A
VGS -4.5V, ID -2A
On-State Drain Current
ID(ON)
VDS = -5V, VGS = -10V
A
S
Forward Transconductance
FS
g
VDS -5V, ID -3A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-30V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = -30V
R L = 30 ohm
VGS = -10V
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-30V, ID = -3 A
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
5
uA
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =-30V, ID =-3A,VGS =-10V
nC
VDS =-30V, ID =-3A,VGS =-4.5V
10
58
85
900
18.5
24
84
16
13
4.5
1.8
9.1
8.5
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
4.2
-
S T M8501
1.7
3.0
60
80
80
100



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